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(a) Cross sectional schematic and (b) top microscope image of four-probe measurement set up for lattice-matched film grown on GaN/sapphire template prepared with insulation layer.
Measured voltage and in-phase vs driving frequency from 100 to 1000 Hz for (a) undoped GaN reference sample and (b) lattice-matched sample at 300 K.
Temperature oscillation amplitude as a function of frequency in logarithm scale for sample and GaN/sapphire reference sample.
(a) Seebeck measurement schematic for thermal gradient created by heater and heat sink and Seebeck voltage as well as temperature difference measured by two thermocouples, and (b) Seebeck voltage as a function of the temperature difference for sample measured at room temperature, with linear regression .
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