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AFM image of epilayer with thickness of 27 nm on ZnO template.
Reciprocal lattice mapping of (105) plane of heterostructure. The intensity contours are illuminated in log-scale.
C-V depth profiling of the 2DEG and net donor concentration in heterostructure. The inset shows the schematic diagram of ZnMgO/ZnO heterostructure.
Magnetic field dependence of magnetoresistance and quantum Hall resistance for heterostructure measured at 1.4 K. The arrows indicate the spin-splitting in 2DEG.
The dependence of sheet carrier concentration as a function of (a) Mg composition and (b) layer thickness. The solid lines correspond to the calculated results based on Eq. (1).
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