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Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
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10.1063/1.3489103
/content/aip/journal/apl/97/11/10.1063/1.3489103
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3489103
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RBS/C random and aligned spectra and the fit to the random spectrum of sample S1000. The inset shows Eu concentration and Ga minimum yield as a function of for all in situ doped samples.

Image of FIG. 2.
FIG. 2.

Full angular scans (symbols) and fits (lines) for Eu and Ga across the and the axes for samples S900 [(a) and (b)] and S1000 [(c) and (d)].

Image of FIG. 3.
FIG. 3.

PL spectra of samples S900, S1000, and I1450. The inset shows the integrated PL intensity within the sharp emission lines normalized to the Eu content.

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/content/aip/journal/apl/97/11/10.1063/1.3489103
2010-09-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3489103
10.1063/1.3489103
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