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Trapping-related recombination of charge carriers in silicon
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Image of FIG. 1.
FIG. 1.

Carrier lifetime data from QSSPC (triangles) and PL (circles) measurements of SiN-passivated mc-Wafer. (a) The experimental data cannot be fitted adequately with SRH recombination model with only a single type of defect, as indicated by comparison with two SRH lifetime parameterization curves. (b) In the trapping free region (i.e., ) the lifetime data can be adequately described by simultaneous recombination via two different types of SRH defects. Dashed lines are the lifetime limits imposed by each of the two types of defects separately; the solid line represents the calculated lifetime with both types of defects acting at the same time.

Image of FIG. 2.
FIG. 2.

QSSPC (triangles) and PL lifetime data (circles) shown together with fits to the experimental data. (a) Inclusion of a single type of RAT splits up the carrier lifetime into an increased apparent lifetime and a decreased recombination lifetime in low injection. Trapping and reduced low injection lifetime is qualitatively well-described already by a single type of RAT state. (b) Improved fit of experimental data by two types of RATs.


Generic image for table
Table I.

Defect parameters for fit curves of Figs. 1 and 2.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Trapping-related recombination of charge carriers in silicon