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Longitudinal magnetotransport measurements at gate voltages from −0 to −1.8 V (from top to bottom in 0.2 V steps). The inset is the expanded data at , which shows well-pronounced two frequency SdH oscillations.
Carrier densities vs gate voltage. The solid dots are the carrier densities for and subbands. Note that right scale is used for the subbands data. The hollow circles are the carrier densities extracted from Hall slope and the hollow diamonds are the sum of two subbands carrier densities.
Quantum lifetime vs gate voltage for the two subbands.
Subband energy vs gate voltage. Solid points are calculation results from ATLAS simulation and hollow points are experimental data. The Fermi energy is taken as the reference .
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