1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure
Rent:
Rent this article for
USD
10.1063/1.3490248
/content/aip/journal/apl/97/11/10.1063/1.3490248
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3490248
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Longitudinal magnetotransport measurements at gate voltages from −0 to −1.8 V (from top to bottom in 0.2 V steps). The inset is the expanded data at , which shows well-pronounced two frequency SdH oscillations.

Image of FIG. 2.
FIG. 2.

Carrier densities vs gate voltage. The solid dots are the carrier densities for and subbands. Note that right scale is used for the subbands data. The hollow circles are the carrier densities extracted from Hall slope and the hollow diamonds are the sum of two subbands carrier densities.

Image of FIG. 3.
FIG. 3.

Quantum lifetime vs gate voltage for the two subbands.

Image of FIG. 4.
FIG. 4.

Subband energy vs gate voltage. Solid points are calculation results from ATLAS simulation and hollow points are experimental data. The Fermi energy is taken as the reference .

Loading

Article metrics loading...

/content/aip/journal/apl/97/11/10.1063/1.3490248
2010-09-17
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3490248
10.1063/1.3490248
SEARCH_EXPAND_ITEM