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Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes
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10.1063/1.3490652
/content/aip/journal/apl/97/11/10.1063/1.3490652
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3490652
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic measurement configuration of single nanorod using conductive atomic force microscopy system.

Image of FIG. 2.
FIG. 2.

Dark current-voltage and photocurrent-voltage characteristics of unpassivated and passivated single nanorod.

Image of FIG. 3.
FIG. 3.

Room-temperature EL spectra of unpassivated and passivated nanorod light-emitting diode.

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/content/aip/journal/apl/97/11/10.1063/1.3490652
2010-09-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/11/10.1063/1.3490652
10.1063/1.3490652
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