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(a) Gate leakage characteristics of Pt-gated MOSCAPs, (b) Energy band diagram of structures, according to literature reports: CBO and VBO of interface (Ref. 17); CBO and VBO of interface (Ref. 10).
characteristics of on p-Ge(100) with ILs (a), (b), and (c) capacitors.
hysteresis characteristics for the (a) and (b) .
characteristics of on n-Ge(100) with ILs. The structure of the gate stacks is (a) and (b).
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