No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Charge modulated reflectance topography for probing in-plane carrier distribution in pentacene field-effect transistors
4.S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 1.
5.R. Salaneck, K. Seki, A. Kahn, and J. -J. Pireaux, Conjugated Polymer and Molecular Interfaces (Marcel Dekker, New York, 2002).
7.H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langeveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, and D. M. de Leeuw, Nature (London) 401, 685 (1999).
13.M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals and Polymers, 2nd ed. (Oxford University Press, London, 1999), Chap. 1.
Article metrics loading...
By using charge modulated reflectance (CMR) topography, we showed that the in-plane carrier distribution in pentacene field-effect transistors(FETs) can be directly probed under the device operation. Further, we showed that the observed CMR signal is attributed to a decrease in the electron population in pentacene highest occupied molecular orbital level, caused by hole injection. The signal profile along the FET channel strongly depends on the bias conditions. The carrier density decreases monotonously along the channel from the source to the drain in the saturated region; this decrease is interpreted by a simple model based on interfacial accumulated charge transportation.
Full text loading...
Most read this month