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reconstruction as barrier for Schottky-barrier formation at the Ga/Si(111) interface
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View: Figures


Image of FIG. 1.
FIG. 1.

Uptake curve of the intensity ratio as a function of Ga deposition time. Also shown by the dotted curve (alternate Y-axis) is the SSQ to determine the 1.0 ML break at 30 min. Inset shows the schematic of the Stranski–Krastnov growth mechanism.

Image of FIG. 2.
FIG. 2.

(a) Plot of peak position as a function of Ga coverage at RT. (b) Shows dependence of the FWHM of peak on Ga coverage at RT. Inset in the figure shows the change in branching ratio of the intensities of the and spin orbit split levels as a function of the Ga adsorption time and coverage.

Image of FIG. 3.
FIG. 3.

LEED pattern (63 eV) obtained for different Ga coverages adsorbed at RT onto surface. (a) Clean , (b) at 0.4 ML, (c) at 0.9 ML, (d) at 1.0 ML, and (e) plots Intensity ratio of the fractional order spot to integral spot (i) and spot to integral order spot (ii) obtained for the various Ga coverages.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: (7×7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si(111) interface