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Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors
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10.1063/1.3491211
/content/aip/journal/apl/97/12/10.1063/1.3491211
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/12/10.1063/1.3491211
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The drain current noise spectral density for SMT devices with gate and 40 nm vs frequency at gate overdrive voltage and 0.6 V.

Image of FIG. 2.
FIG. 2.

The normalized drain current noise spectral density at a frequency and the transconductance to drain current squared as function of drain current for SMT device with length and 40 nm gate length. The inset shows the normalized drain current noise spectral density at as function of gate overdrive .

Image of FIG. 3.
FIG. 3.

The normalized input-referred voltage noise spectral density at a frequency vs gate overdrive for SMT devices with gate length and 40 nm gate length.

Image of FIG. 4.
FIG. 4.

The gate tunneling current density vs gate voltage for SMT devices with channel length of and 40 nm.

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/content/aip/journal/apl/97/12/10.1063/1.3491211
2010-09-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/12/10.1063/1.3491211
10.1063/1.3491211
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