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The drain current noise spectral density for SMT devices with gate and 40 nm vs frequency at gate overdrive voltage and 0.6 V.
The normalized drain current noise spectral density at a frequency and the transconductance to drain current squared as function of drain current for SMT device with length and 40 nm gate length. The inset shows the normalized drain current noise spectral density at as function of gate overdrive .
The normalized input-referred voltage noise spectral density at a frequency vs gate overdrive for SMT devices with gate length and 40 nm gate length.
The gate tunneling current density vs gate voltage for SMT devices with channel length of and 40 nm.
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