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Selective area growth of high quality InP on Si (001) substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematics of Ge surface step creation in STI trenches of different widths. (a) STI trenches are defined on a Si (001) substrate by standard Si STI processing. (b) The Si is over etched so that a concave surface is obtained then a thin Ge layer is deposited followed by annealing. The zoom-in view of atomic steps on the Ge surface at the center of a submicron trench is shown in (c). The parameters associated with the atomic steps are shown, trench width , atomic step height, , terrace width, , and the maximum distance from the Ge surface to the reference Si surface, .

Image of FIG. 2.
FIG. 2.

Bright field cross- section TEM images (g[004]) of InP grown in the 100 nm (a) and 200 nm (b) wide STI trenches. {111} and {311} Si facets were obtained after Si etch with HCl vapor. TDs are confined in the bottom of the trenches.

Image of FIG. 3.
FIG. 3.

Cross-section TEM image taken along the 200 nm trench in Fig. 2(b). The twin defects on the left side of the overgrown InP are believed to be caused by the imperfection of the STI side walls that disturbs the crystal growth. The vertical line on the right part of InP is an artifact of the TEM sample preparation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective area growth of high quality InP on Si (001) substrates