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Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
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10.1063/1.3491841
/content/aip/journal/apl/97/12/10.1063/1.3491841
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/12/10.1063/1.3491841
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD scans for the film before and after annealing for 48 h. The two curves are offset for clarity. The thick lines show the simulated curves, and the dashed vertical lines mark the approximate position of the 004 reflection. The fitting reveals that the layers are under tensile strain with a lattice mismatch of −0.28% for the as-grown sample and −0.49% after annealing.

Image of FIG. 2.
FIG. 2.

Magnetic hysteresis loops measured by SQUID magnetometry at for layers (a) as grown with the external magnetic field applied along the in-plane [100] (closed squares) and the perpendicular-to-plane [001] (open circles) directions, and (b) annealed layers with the external magnetic field applied along the in-plane [110] (closed squares) and the perpendicular-to-plane [001] (open circles) directions. The insets show the projected remnant magnetization vs temperature for the two orientations.

Image of FIG. 3.
FIG. 3.

(a) Resistivity vs temperature for and (b) Hall measurements (normalized to at ) at for as-grown and after successive annealing steps at . The external magnetic field is applied perpendicular to the film plane. The inset in (a) shows as a function of annealing time.

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/content/aip/journal/apl/97/12/10.1063/1.3491841
2010-09-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/12/10.1063/1.3491841
10.1063/1.3491841
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