1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes
Rent:
Rent this article for
USD
10.1063/1.3493648
/content/aip/journal/apl/97/12/10.1063/1.3493648
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/12/10.1063/1.3493648
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Well width and (b) In composition as a function of the compressive strain in the well to give the transition wavelength of 530 nm strain-compensated QW structure grown on substrate.

Image of FIG. 2.
FIG. 2.

Valence-band structures of 530 nm strain-compensated InGaN/InGaN/MgZnO QW structures with (a) and . The strain in the well and the barrier is 0.5%. The SC solutions are obtained at a sheet carrier density of .

Image of FIG. 3.
FIG. 3.

(a) Optical matrix elements as a function of the in-plane wave vector and (b) spontaneous emission spectra for 530 nm strain-compensated QW structure grown on substrate.

Image of FIG. 4.
FIG. 4.

(a) Optical matrix elements at a band edge and (b) spontaneous emission peak as a function of the compressive strain in the well for 530 nm strain-compensated QW structure with several Mg compositions. The SC solutions are obtained at a sheet carrier density of .

Loading

Article metrics loading...

/content/aip/journal/apl/97/12/10.1063/1.3493648
2010-09-23
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/12/10.1063/1.3493648
10.1063/1.3493648
SEARCH_EXPAND_ITEM