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Calculated band diagrams for the case that the IB region is intrinsic. (a) and both depend on and (b) independent of , respectively. , , and are CB, IB, and VB energies, and , , and are quasi-Fermi energies of CB, IB, and VB, respectively.
Calculated band diagrams for the case that the IB region is doped with donor density equal to the density of QDs. (a) Generation rates and both depend on , and (b) independent of , respectively.
Optical generation rates via IB in intrinsic IB region case for the short-circuit condition. Dashed curves are dependent case and solid curves are independent case, respectively.
Current–voltage characteristics. Darker dashed and solid lines are independent of and . Lighter lines are dependent. Dotted-dashed line is GaAs baseline cell without IB states.
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