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Electron-hole wave function overlap (left) and peak emission wavelength (right) vs indium content with InGaN QW thickness of and .
Energy band lineups of (a) conventional 30 Å QW, and (b) 30 Å InN QW with electron wave function of EC1 and hole wave function of HH1.
(a) Interband transition wavelength and (b) electron-hole wave function overlap vs InN layer thickness for 30 Å InN QW for both cases of InGaN-delta-InN QW and InN SQW-like .
(a) Spontaneous emission spectra for conventional 30 Å QW, 30 Å InN QW, 30 Å InN QW and 30 Å InN QW with carrier density , and (b) spontaneous emission radiative recombination rate as a function of carrier density up to for the three QW structures at .
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