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Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
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10.1063/1.3493188
/content/aip/journal/apl/97/13/10.1063/1.3493188
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/13/10.1063/1.3493188
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electron-hole wave function overlap (left) and peak emission wavelength (right) vs indium content with InGaN QW thickness of and .

Image of FIG. 2.
FIG. 2.

Energy band lineups of (a) conventional 30 Å QW, and (b) 30 Å InN QW with electron wave function of EC1 and hole wave function of HH1.

Image of FIG. 3.
FIG. 3.

(a) Interband transition wavelength and (b) electron-hole wave function overlap vs InN layer thickness for 30 Å InN QW for both cases of InGaN-delta-InN QW and InN SQW-like .

Image of FIG. 4.
FIG. 4.

(a) Spontaneous emission spectra for conventional 30 Å QW, 30 Å InN QW, 30 Å InN QW and 30 Å InN QW with carrier density , and (b) spontaneous emission radiative recombination rate as a function of carrier density up to for the three QW structures at .

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/content/aip/journal/apl/97/13/10.1063/1.3493188
2010-10-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/13/10.1063/1.3493188
10.1063/1.3493188
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