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Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
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10.1063/1.3493654
/content/aip/journal/apl/97/13/10.1063/1.3493654
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/13/10.1063/1.3493654
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

External quantum efficiency vs current and theoretical model and model fits (a) on linear and (b) log scale. Whereas the model gives an excellent fit, the model deviates from experimental results at high currents.

Image of FIG. 2.
FIG. 2.

Normalized IQE as a function of current for GaInN/GaN LED samples (a) with different chip areas, and (b) with different number of quantum wells.

Image of FIG. 3.
FIG. 3.

Internal quantum efficiency (a) vs carrier concentration, and (b) vs current, and theoretical fits using model with phase-space filling adjustments and model.

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/content/aip/journal/apl/97/13/10.1063/1.3493654
2010-09-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/13/10.1063/1.3493654
10.1063/1.3493654
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