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terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K
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10.1063/1.3496035
/content/aip/journal/apl/97/13/10.1063/1.3496035
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/13/10.1063/1.3496035
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Figures

Image of FIG. 1.
FIG. 1.

Conduction band diagrams, under operating bias, of a two quantum-cascade stages of the devices with (a) double-phonon resonant depopulation and (b) single-phonon resonant depopulation active regions. A single quantum-cascade stage is marked by a dashed box and the total number of stages is indicated. The operating bias voltage was calculated to be 14.3 kV/cm and 12.8 kV/cm for double- and single-phonon devices, respectively. The layer sequences, in nanometers, for the double-phonon and single-phonon designs are, starting from the injection barrier (the barrier on the leftmost side of the band diagrams): 6.3/7.0/3.2/5.6/5.6/6.3/1.2/5.7/5.2//1.0/7.4 and 6.2/7.1/3.2/5.7/5.6//1.0/, respectively. Here, barriers are indicated in bold and the underlined layers are n-doped. For the double-phonon design, a 6.4 nm well was uniformly doped at . For the single-phonon design, 2.5 and 2.4 nm sections of the 6.0 and 6.9 nm wells immediately adjacent to the 1 nm barrier were n-doped at . Grey arrows indicate lasing transitions, with energies and dipole moments as indicated. Phonon transitions are indicated as .

Image of FIG. 2.
FIG. 2.

Current-voltage (I-V) and light output-current (L-I) characteristics of (a) a single-phonon device, and (b) a double-phonon device, operated with 100 ns pulses at different temperatures. Solid I-V lines represent device operation at 78 K and dashed I-V lines represents device operation at 156 K for the single-phonon device and 170 K for the double-phonon device. Insets: device spectra near the peak output power at 78 K. Results were obtained with a single-phonon device and a double-phonon device.

Image of FIG. 3.
FIG. 3.

Threshold current density as a function of temperature for single-phonon (circles) and double-phonon (triangles) devices. Results were obtained with a single-phonon device and a double phonon device operated in pulsed mode with 100 ns pulses.

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/content/aip/journal/apl/97/13/10.1063/1.3496035
2010-10-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/13/10.1063/1.3496035
10.1063/1.3496035
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