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Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of
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10.1063/1.3492847
/content/aip/journal/apl/97/14/10.1063/1.3492847
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3492847
/content/aip/journal/apl/97/14/10.1063/1.3492847
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/content/aip/journal/apl/97/14/10.1063/1.3492847
2010-10-04
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3492847
10.1063/1.3492847
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