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Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of
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10.1063/1.3492847
/content/aip/journal/apl/97/14/10.1063/1.3492847
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3492847
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

C-V characteristics as a function of frequency of (a) n-type ALD and PEALD samples with HCl treatment and (b) p-type ALD and PEALD samples with HCl treatment. Measurement temperature is indicated in the figure.

Image of FIG. 2.
FIG. 2.

Conductance contours of n-type and p-type GaSb MOSCAPs with PEALD showing good Fermi level modulation toward valence and conduction band sides.

Image of FIG. 3.
FIG. 3.

XPS data comparing the concentration of in ALD and PEALD samples. Reduction in in the (higher temperature) ALD samples is evident.

Image of FIG. 4.
FIG. 4.

(a) Extracted from n-type and p-type samples showing low near VB for PEALD MOSCAPs. The inversion side for the n-type MOSCAPs was modeled to evaluate (Ref. 9) which is consistent with the data obtained from p-type samples. (b) Fermi level movement efficiency of GaSb MOSCAPs with ALD and PEALD .

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/content/aip/journal/apl/97/14/10.1063/1.3492847
2010-10-04
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3492847
10.1063/1.3492847
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