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C-V characteristics as a function of frequency of (a) n-type ALD and PEALD samples with HCl treatment and (b) p-type ALD and PEALD samples with HCl treatment. Measurement temperature is indicated in the figure.
Conductance contours of n-type and p-type GaSb MOSCAPs with PEALD showing good Fermi level modulation toward valence and conduction band sides.
XPS data comparing the concentration of in ALD and PEALD samples. Reduction in in the (higher temperature) ALD samples is evident.
(a) Extracted from n-type and p-type samples showing low near VB for PEALD MOSCAPs. The inversion side for the n-type MOSCAPs was modeled to evaluate (Ref. 9) which is consistent with the data obtained from p-type samples. (b) Fermi level movement efficiency of GaSb MOSCAPs with ALD and PEALD .
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