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High-performance -type organic field-effect transistors with ionic liquid gates
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Image of FIG. 1.

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FIG. 1.

(a) Schematic structure of the IL gated devices. (b) Optical microscope image of a PDIF- crystal/[P13][TFSI] transistor. (c) Frequency dependence of the capacitance of [P13][TFSI] EDL, measured by the ac impedance technique. (Inset) Chemical structures of [P13][TFSI].

Image of FIG. 2.

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FIG. 2.

(a) Transfer characteristics and (b) gate leakage current of a PDIF-/[P13][TFSI] single-crystal OFET measured with . (c) Output characteristics of the same device measured with . The insets in (a) and (c) show measurements on the same device before inserting the IL [in (a): ; in (c) ].

Image of FIG. 3.

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FIG. 3.

Gate-voltage dependence conductivity of a [P13][TFSI]/PDIF- single crystal OFETs measured in a four-terminal configuration with different drain voltages [ (red, line), 0.2 (green, dotted line), 0.3 V (blue, dashed line)]. The corresponding carrier mobility as a function of gate voltage is shown in inset.

Image of FIG. 4.

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FIG. 4.

Comparison of the mobility of [P13][TFSI]/PDIF- single crystal OFETs with that obtained from the same devices before inserting the IL.

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/content/aip/journal/apl/97/14/10.1063/1.3493190
2010-10-08
2014-04-20

Abstract

High-performance -type organic field-effect transistors were developed with ionic-liquid gates and -bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as . These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and -type organic semiconductor interfaces are suitable to realize high-quality -type organic transistors operating at small gate voltage, without sacrificing electron mobility.

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Scitation: High-performance n-type organic field-effect transistors with ionic liquid gates
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3493190
10.1063/1.3493190
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