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Topological insulator thin films grown on double-layer graphene by molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) RHEED intensity of the (0, 0) diffraction vs growth time. (b) RHEED pattern along direction and (c) STM image of the 26 QL film acquired at a sample bias of 1.0 V. (d) STM image showing the Se vacancies (arrows).

Image of FIG. 2.
FIG. 2.

(a) ARPES intensity map of the 26 QL film along the direction. The dotted line indicates the Fermi level, and the topological surface states, respectively. (b) Thickness-dependent surface Dirac point of films on graphene and Si substrates.

Image of FIG. 3.
FIG. 3.

(a) Large scale and (b) atomic resolution STM images of double-layer graphene on SiC(0001) substrate. (c) STM image recorded after deposition of 1.5 QL on graphene. (d) High-resolution STM image of 1 QL film. The bright spot corresponds to a topmost surface Se atom. (e) mapping of 1 QL film at , revealing a Moiré pattern with a period of 7.10 nm. (f) Simulated Moiré pattern by assuming a fully relaxed on graphene.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy