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AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices
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10.1063/1.3495782
/content/aip/journal/apl/97/14/10.1063/1.3495782
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3495782

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD spectrum of the AlN(0002)/3C–SiC(100)/Si(100) layered structure where the AlN film is and the 3C–SiC layer is . (b) Rocking curve of -thick AlN (0002) film deposited on the epitaxial 3C–SiC layer on the Si (100) substrate.

Image of FIG. 2.
FIG. 2.

Plot of the measured FWHM of AlN thin films grown under different deposition conditions vs AlN film thicknesses.

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional SEM image of -thick AlN (0002) film on the epitaxial 3C–SiC layer on the Si (100) substrate. (b) Cross-sectional BF TEM image of the interface between AlN (0002) and 3C–SiC (100). (c) Cross-sectional HRTEM image of the interface between AlN (0002) and 3C–SiC (100). An amorphous AlN starting layer appeared at the beginning of AlN sputtering process. (d) ED pattern of -thick AlN (0002) film grown on the epitaxial 3C–SiC (100) layer along the [110] zone axis of AlN. (e) ED pattern of -thick epitaxial 3C–SiC layer grown on the Si (100) substrate along the [110] zone axis of 3C–SiC.

Image of FIG. 4.
FIG. 4.

Measured frequency responses of the SAW device on the AlN/3C–SiC/Si layered structure after time-gating.

Tables

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Table I.

Design parameters of the SAW device.

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/content/aip/journal/apl/97/14/10.1063/1.3495782
2010-10-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3495782
10.1063/1.3495782
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