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AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices
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10.1063/1.3495782
/content/aip/journal/apl/97/14/10.1063/1.3495782
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3495782
/content/aip/journal/apl/97/14/10.1063/1.3495782
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/content/aip/journal/apl/97/14/10.1063/1.3495782
2010-10-06
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3495782
10.1063/1.3495782
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