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(a) L-I characteristics measured on one of the analyzed devices submitted to stress at , RT. (b) OP degradation measured at different current levels during stress on the same sample.
(a) EL spectra measured on one of the analyzed samples during stress at , RT. (b) Variation in the intensity of the main UV peak and of the deep level related peak during stress time [for the same sample as in (a)].
ACD profiles extracted from C-V measurements carried out at different stress times on one of the analyzed LEDs.
OP degradation measured during stress at (a) different junction temperature and (b) at different current levels.
Stress conditions adopted for the reliability tests.
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