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Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes
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10.1063/1.3497082
/content/aip/journal/apl/97/14/10.1063/1.3497082
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3497082

Figures

Image of FIG. 1.
FIG. 1.

(a) L-I characteristics measured on one of the analyzed devices submitted to stress at , RT. (b) OP degradation measured at different current levels during stress on the same sample.

Image of FIG. 2.
FIG. 2.

(a) EL spectra measured on one of the analyzed samples during stress at , RT. (b) Variation in the intensity of the main UV peak and of the deep level related peak during stress time [for the same sample as in (a)].

Image of FIG. 3.
FIG. 3.

ACD profiles extracted from C-V measurements carried out at different stress times on one of the analyzed LEDs.

Image of FIG. 4.
FIG. 4.

OP degradation measured during stress at (a) different junction temperature and (b) at different current levels.

Tables

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Table I.

Stress conditions adopted for the reliability tests.

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/content/aip/journal/apl/97/14/10.1063/1.3497082
2010-10-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3497082
10.1063/1.3497082
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