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The SEM images of the Ir-NCs derived from various Ir film thicknesses of (a) 4.5, (b) 6.0, (c) 7.5, and (d) 9 nm after a rapid thermal annealing process at for 60 s in atmosphere. (e) The corresponding size distribution of Ir-NCs of (a).
The SEM images of the Ir film under various annealing temperatures of 700, 800, and when the thickness is 12 nm.
The TEM image of the stack. The structure schematic corresponding to the resulted stack is revealed in the inset.
(a) Comparison of XPS survey spectra of the Ir film before and after annealing process for 60 s. (b) The XPS spectra of the Ir-NCs on layer before and after 800 and annealing processes.
(a) CV curves of device stack at different sweeping voltages. (b) Device durability curves of the device stack with and 10 ms stressing condition. (c) The data retention characteristic of the device stack with Ir-NCs obtained by electron charging (, 10 ms) and discharging (−15 V, 10 ms) at RT and .
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