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Formation of iridium nanocrystals with highly thermal stability for the applications of nonvolatile memory device with excellent trapping ability
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10.1063/1.3498049
/content/aip/journal/apl/97/14/10.1063/1.3498049
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3498049
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The SEM images of the Ir-NCs derived from various Ir film thicknesses of (a) 4.5, (b) 6.0, (c) 7.5, and (d) 9 nm after a rapid thermal annealing process at for 60 s in atmosphere. (e) The corresponding size distribution of Ir-NCs of (a).

Image of FIG. 2.
FIG. 2.

The SEM images of the Ir film under various annealing temperatures of 700, 800, and when the thickness is 12 nm.

Image of FIG. 3.
FIG. 3.

The TEM image of the stack. The structure schematic corresponding to the resulted stack is revealed in the inset.

Image of FIG. 4.
FIG. 4.

(a) Comparison of XPS survey spectra of the Ir film before and after annealing process for 60 s. (b) The XPS spectra of the Ir-NCs on layer before and after 800 and annealing processes.

Image of FIG. 5.
FIG. 5.

(a) CV curves of device stack at different sweeping voltages. (b) Device durability curves of the device stack with and 10 ms stressing condition. (c) The data retention characteristic of the device stack with Ir-NCs obtained by electron charging (, 10 ms) and discharging (−15 V, 10 ms) at RT and .

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/content/aip/journal/apl/97/14/10.1063/1.3498049
2010-10-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of iridium nanocrystals with highly thermal stability for the applications of nonvolatile memory device with excellent trapping ability
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3498049
10.1063/1.3498049
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