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Schematic of the multilayer structure of the fabricated p-GaN/Er:InGaN/n-GaN LEDs. The active region is a 200 nm thick Er doped epilayer [or ].
I-V characteristics of a LED. The inset shows the same plot on a semilog scale. The leakage current is at −15 V bias.
RT EL spectra of a LED (a) in visible region, and (b) in near-IR region under a current injection of 20 mA with a forward bias of 12.5 V.
Integrated optical power, over the visible and near IR regions, of a LED as a function of input forward current.
Near IR EL spectra of a LED under different levels of injection currents. The inset shows the peak EL intensities of 1.0 and emissions as functions of injection current.
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