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: Extremely mismatched semiconductor alloys
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10.1063/1.3499753
/content/aip/journal/apl/97/14/10.1063/1.3499753
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3499753
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The bismuth composition in measured by RBS as a function of LT-MBE thermocouple temperature. The III-V ratio was approximately 1:1 and the films were homogeneous in the growth direction within the resolution limit of RBS. Inset contains a representative RBS spectrum for a film with . The blue, green, and red lines correspond to the Bi, Ga, and total simulated contributions to the spectrum.

Image of FIG. 2.
FIG. 2.

XRD patterns from the GaNBi films grown at various temperatures. Crystalline GaN with no Bi incorporated is present even at the lowest growth temperature. GaN Crystallite size as a function of growth temperature determined from peak breadth contained in inset.

Image of FIG. 3.
FIG. 3.

The absorption spectra for films grown at different growth temperatures. The composition of each film is given in the figure.

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/content/aip/journal/apl/97/14/10.1063/1.3499753
2010-10-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN1−xBix: Extremely mismatched semiconductor alloys
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/14/10.1063/1.3499753
10.1063/1.3499753
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