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Carbon impurities and the yellow luminescence in GaN
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2010-10-13
2015-07-29

Abstract

Using hybrid functional calculations we investigate the effects of carbon on the electrical and optical properties of GaN. In contrast to the currently accepted view that C substituting for N is a shallow acceptor, we find that has an ionization energy of 0.90 eV. Our calculated absorption and emission lines also indicate that is a likely source for the yellow luminescence that is frequently observed in GaN, solving the longstanding puzzle of the nature of the C-related defect involved in yellow emission. Our results suggest that previous experimental data, analyzed under the assumption that acts as a shallow acceptor, should be re-examined.

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Scitation: Carbon impurities and the yellow luminescence in GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3492841
10.1063/1.3492841
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