No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Carbon impurities and the yellow luminescence in GaN
3.Gallium Nitride (GaN) I, Semiconductors and Semimetals Vol. 50, edited by J. I. Pankove and T. D. Moustakas (Academic, San Diego, 1998);
3.Gallium Nitride (GaN) II, Semiconductors and Semimetals Vol. 57, edited by J. I. Pankove and T. D. Moustakas (Academic, San Diego, 1999).
4.E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers, and R. J. Molnar, Mater. Sci. Eng., B 93, 39 (2002).
5.H. Morkoç, Handbook of Nitride Semiconductors and Devices (Wiley, New York, 2008), Vol. 1–3.
18.V. Fiorentini, L. F. Bernardini, A. Bosin, and D. Vanderbilt, Proceedings of the 23rd International Conference on Physics of Semiconductors (World Scientific, Singapore, 1996), Vol. 4, p. 2877.
21.K. Saarinen, T. Laine, S. Kuisma, J. Nissilä P. Hautoj ärvi, L. Dobrzynski, J. M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory, and S. Porowski Phys. Rev. Lett. 79, 3030 (1997).
22.R. Armitage, W. Hong, Y. Qing, H. Feick, J. Gebauer, E. R. Weber, S. Hautakangas, and K. Saarinen, Appl. Phys. Lett. 82, 3457 (2003).
33.Semiconductors: Basic Data, 2nd ed., edited by O. Madelung (Springer, Berlin, 1996).
Article metrics loading...
Using hybrid functional calculations we investigate the effects of carbon on the electrical and optical properties of GaN. In contrast to the currently accepted view that C substituting for N is a shallow acceptor, we find that has an ionization energy of 0.90 eV. Our calculated absorption and emission lines also indicate that is a likely source for the yellow luminescence that is frequently observed in GaN, solving the longstanding puzzle of the nature of the C-related defect involved in yellow emission. Our results suggest that previous experimental data, analyzed under the assumption that acts as a shallow acceptor, should be re-examined.
Full text loading...
Most read this month