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Carbon impurities and the yellow luminescence in GaN
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10.1063/1.3492841
/content/aip/journal/apl/97/15/10.1063/1.3492841
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3492841
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Formation energy vs Fermi level for and in GaN. Ga-rich conditions are shown in (a) and N-rich conditions in (b).

Image of FIG. 2.
FIG. 2.

(a) Spin density of , with an isosurface at 10% of the maximum. (b) Configuration-coordinate diagram for the impurity in GaN. The coordinate corresponds to the distance between C and Ga along the axis. Optical absorption with as the initial state occurs starting at 2.60 eV and peaks at 2.95 eV. Emission associated with the transition is predicted to occur at 2.14 eV, i.e., in the yellow region of the spectrum.

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/content/aip/journal/apl/97/15/10.1063/1.3492841
2010-10-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carbon impurities and the yellow luminescence in GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3492841
10.1063/1.3492841
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