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Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth
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10.1063/1.3493184
/content/aip/journal/apl/97/15/10.1063/1.3493184
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3493184
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic sample structure, (b) Nomarski optical micrograph of the sample [substrate: Si (100), ] after RTA (, 1 s), and (c) EBSD images of grown regions near seeding edges and at around from seeding edge [substrate: Si (100), (110), and (111), ].

Image of FIG. 2.
FIG. 2.

(a) Rotation angle as a function of the distance from seeding edge for different growth-directions [substrate: Si (111), direction: and ], and (b) maximum rotation angle as a function of the growth direction [substrate: Si (111)]. Crystal planes and their bonding structures along and directions are also shown.

Image of FIG. 3.
FIG. 3.

EBSD images for samples [ (a), 35° (b)] grown on Si (110) seeding substrates and (c) maximum rotation angle as a function of the angle deviating from direction. Results obtained from Si (100), (110), and (111) seeding substrates are summarized.

Image of FIG. 4.
FIG. 4.

TEM images and ED patterns of GOI samples grown from Si (100) (a), (110) (b), and (111) seeding substrates (c). All growth directions are fixed as .

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/content/aip/journal/apl/97/15/10.1063/1.3493184
2010-10-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3493184
10.1063/1.3493184
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