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(a) Schematic sample structure, (b) Nomarski optical micrograph of the sample [substrate: Si (100), ] after RTA (, 1 s), and (c) EBSD images of grown regions near seeding edges and at around from seeding edge [substrate: Si (100), (110), and (111), ].
(a) Rotation angle as a function of the distance from seeding edge for different growth-directions [substrate: Si (111), direction: and ], and (b) maximum rotation angle as a function of the growth direction [substrate: Si (111)]. Crystal planes and their bonding structures along and directions are also shown.
EBSD images for samples [ (a), 35° (b)] grown on Si (110) seeding substrates and (c) maximum rotation angle as a function of the angle deviating from direction. Results obtained from Si (100), (110), and (111) seeding substrates are summarized.
TEM images and ED patterns of GOI samples grown from Si (100) (a), (110) (b), and (111) seeding substrates (c). All growth directions are fixed as .
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