Full text loading...
Schematic diagram of (a) BG MOSFET and (b) 1T-DRAM devices fabricated on the sSOI substrate.
Cross-sectional TEM images of FD sSOI substrate.
Dependence of drain current vs backgate voltage curves of FD sSOI BG MOSFET on the RTA temperatures. , .
Current-voltage characteristics of FD sSOI capacitorless 1T-DRAM cells: (a) transfer characteristics and (b) output characteristics . .
Sensing margin of current difference between “1” and “0” states of FD sSOI 1T-DRAM ( for write “1,” for read, for write “0” operation. , , and ).
Relationship of sensing margin and retention time of FD sSOI 1T-DRAM to back interface trap density.
Article metrics loading...