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Effects of back interface trap states on the fully depleted strained-silicon-on-insulator capacitorless single transistor dynamic random access memory cells
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10.1063/1.3494262
/content/aip/journal/apl/97/15/10.1063/1.3494262
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3494262
/content/aip/journal/apl/97/15/10.1063/1.3494262
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/content/aip/journal/apl/97/15/10.1063/1.3494262
2010-10-12
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of back interface trap states on the fully depleted strained-silicon-on-insulator capacitorless single transistor dynamic random access memory cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3494262
10.1063/1.3494262
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