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Conducting interfaces between band insulating oxides: The heterostructure
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10.1063/1.3496440
/content/aip/journal/apl/97/15/10.1063/1.3496440
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3496440
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The RHEED pattern of a (a) STO single crystal, (b) 6 u.c. thick, and (c) 12 u.c. thick LGO film surface compared with a (d) 12 u.c. thick LAO film. An example of RHEED oscillations during the growth of LGO is shown in (e).

Image of FIG. 2.
FIG. 2.

Annular dark-field (ADF)-STEM images of (a) the LGO/STO and (d) the LAO/STO interface, grown in an oxygen partial pressure of and , respectively, both viewed down the STO 100 zone axis. The La ions are the brightest followed by the Sr ions. The Ti ions appear smaller and dimmer than the Sr ions. The contrast is insufficient to resolve O, Al, and Ga ions. Plots (c) and (f) show the result of EELS line scans. Plotted are the integrated intensities of the (squares) and the (circles) transition edges. The maxima correspond to the approximate position of Ti and La columns, respectively. Insets (b) and (e) are Ti and La maps obtained on LGO/STO and LAO/STO, respectively, through acquisition of EEL spectrum images. Square red symbols indicate Ti columns and light blue circles indicate La columns.

Image of FIG. 3.
FIG. 3.

The sheet resistance of three LGO/STO interfaces grown at different oxygen pressure is shown in (a). The transition to the superconducting state of a LGO/STO sample grown at is shown in (b). The sheet resistance vs temperature of 12 u.c. LAO, LGO and LMO based interfaces grown at the pressure of is reported in (c).

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/content/aip/journal/apl/97/15/10.1063/1.3496440
2010-10-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conducting interfaces between band insulating oxides: The LaGaO3/SrTiO3 heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3496440
10.1063/1.3496440
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