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Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications
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10.1063/1.3496457
/content/aip/journal/apl/97/15/10.1063/1.3496457
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3496457
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a). Resistance vs temperature characteristics for different NbN films: 4.5 nm thick NbN film deposited on GaAs at (black squares); 4.0 nm thick NbN on MgO at (blue circles) and 4.5 nm thick NbN deposited on GaAs at (red triangles). All the thicknesses have been measured with AFM with a resolution of 0.5 nm as in [ref opex 08]. (b) AFM image of a 5 nm thick NbN film on GaAs deposited at and (c) .

Image of FIG. 2.
FIG. 2.

(a) AFM images a SSPD with , , , and active area of and detailed view of the SSPD NbN nanowire, coated with the HSQ mask; (b) Two-wires IV characteristic of the SSPD shown in (a) resulting in and . (c) Reflectivity (left axis) of the unprocessed DBR substrate (top continuous line), SSPD (lower continuous line), and spectral dependence of the QE (right axis) on a fabricated SSPD on DBR (squares).

Image of FIG. 3.
FIG. 3.

QE (squares, left axis) and dark count rate (circles, right axis) at 4.2 K as a function of the normalized bias current. The incident photon wavelength was 1300 nm. Inset: single-shot trace of SSPD output pulse after 56 dB amplification.

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/content/aip/journal/apl/97/15/10.1063/1.3496457
2010-10-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3496457
10.1063/1.3496457
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