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(a). Resistance vs temperature characteristics for different NbN films: 4.5 nm thick NbN film deposited on GaAs at (black squares); 4.0 nm thick NbN on MgO at (blue circles) and 4.5 nm thick NbN deposited on GaAs at (red triangles). All the thicknesses have been measured with AFM with a resolution of 0.5 nm as in [ref opex 08]. (b) AFM image of a 5 nm thick NbN film on GaAs deposited at and (c) .
(a) AFM images a SSPD with , , , and active area of and detailed view of the SSPD NbN nanowire, coated with the HSQ mask; (b) Two-wires IV characteristic of the SSPD shown in (a) resulting in and . (c) Reflectivity (left axis) of the unprocessed DBR substrate (top continuous line), SSPD (lower continuous line), and spectral dependence of the QE (right axis) on a fabricated SSPD on DBR (squares).
QE (squares, left axis) and dark count rate (circles, right axis) at 4.2 K as a function of the normalized bias current. The incident photon wavelength was 1300 nm. Inset: single-shot trace of SSPD output pulse after 56 dB amplification.
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