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Hydrogen induced passivation of Si interfaces by films and stacks
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10.1063/1.3497014
/content/aip/journal/apl/97/15/10.1063/1.3497014
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3497014
/content/aip/journal/apl/97/15/10.1063/1.3497014
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/content/aip/journal/apl/97/15/10.1063/1.3497014
2010-10-12
2014-11-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3497014
10.1063/1.3497014
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