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Hydrogen induced passivation of Si interfaces by films and stacks
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10.1063/1.3497014
/content/aip/journal/apl/97/15/10.1063/1.3497014
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3497014
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Figures

Image of FIG. 1.
FIG. 1.

Maximum effective surface recombination velocity for cumulative annealing treatments (in steps of 1 min) for floatzone Si wafers (-type, ) with stack and layer. The latter sample was hydrogenated by using a sacrificial film during annealing at for 10 min. Prior to this experiment, also the stack was annealed under the same conditions. Lines serve as guide for the eye.

Image of FIG. 2.
FIG. 2.

Deuterium depth profiles measured with SIMS for stacks on Si, (1) as-deposited, (2) after annealing at (10 min), and (3) after annealing at (10 min) and subsequent annealing at (30s). The vertical axis displays the calibrated [D] in the films. For the and Si, calibrations revealed that [D] is a factor 1.7 higher than indicated on the axis. For (1), the lower apparent D signal for short sputtering times is a measurement artifact.

Image of FIG. 3.
FIG. 3.

Thermal effusion measurements for an film [(a) and (b)] and for deuterated (“”) prepared using a sacrificial film during annealing [(c) and (d)].

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/content/aip/journal/apl/97/15/10.1063/1.3497014
2010-10-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3497014
10.1063/1.3497014
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