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High oxidation state at the epitaxial interface of thin films grown on Si(111) and Si(001)
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10.1063/1.3499280
/content/aip/journal/apl/97/15/10.1063/1.3499280
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3499280
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Image of FIG. 1.
FIG. 1.

(gray solid line) recorded on 1 nm thick of epitaxial on Si(111) (a) and on Si(001) (b). The photon energy tuned at for both samples (surface sensitive mode), with an overall experimental resolution better than 40 meV. The curve resulting from the fitting procedure (dark solid line) is compared to the intensity (dots). The binding energy shift for each component is indicated in the figure, in relation to the bulk (b), the corresponding Gaussian width (between square brackets). The Gaussian FWHM of B, and are 0.32 eV. The Lorentzian width is 0.085 eV.

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/content/aip/journal/apl/97/15/10.1063/1.3499280
2010-10-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3499280
10.1063/1.3499280
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