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High oxidation state at the epitaxial interface of thin films grown on Si(111) and Si(001)
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10.1063/1.3499280
/content/aip/journal/apl/97/15/10.1063/1.3499280
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3499280
/content/aip/journal/apl/97/15/10.1063/1.3499280
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/content/aip/journal/apl/97/15/10.1063/1.3499280
2010-10-11
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3499280
10.1063/1.3499280
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