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Output power-current-voltage (L-I-V) characteristics of a 980 nm double oxide-aperture VCSEL at temperatures from 20 to (a), and the corresponding extracted values for the maximum differential efficiency and threshold current (b).
Magnitude of the small signal modulation response (2-port scattering parameter ) for different applied forward bias currents and the corresponding curve-fits at (a), and at (b).
Relaxation resonance frequency and –3 dB frequency vs VCSEL forward bias current (a), and damping factor vs -squared with corresponding linear fits (b), both at temperatures of 20, 50, and .
Bit error rates at 25 Gbit/s at 25 and at the corresponding VCSEL drive current of 12 mA and of 0.8 V for a BTB measurement configuration with a PRBS in the conventional NRZ excitation scheme.
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