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The origin of the resistance change in GeSbTe films
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10.1063/1.3499751
/content/aip/journal/apl/97/15/10.1063/1.3499751
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3499751

Figures

Image of FIG. 1.
FIG. 1.

EXAFS data for as-grown in (a) space and (b) space. The fitting process was done using FEFF8 and IFFEFFIT codes.

Image of FIG. 2.
FIG. 2.

Raman spectra for as deposited and annealed crystalline GST at 220 and . The dashed vertical line indicates the position of the tetrahedral Ge and the homopolar Ge bonds in ab initio calculation.

Image of FIG. 3.
FIG. 3.

(a) and (b) near edge x-ray absorption fine structure (NEXAFS) spectra of as-grown and annealed GST films.

Image of FIG. 4.
FIG. 4.

(a) and RXES spectra for the as-grown GST (black) and the GST with annealing at (red) and (green). (b) The rescaled RXES emission spectra of (a). (c) The integrated intensity of the emission and the conductivity of the GST films with an annealing treatment.

Tables

Generic image for table
Table I.

Bond length and coordination of Ge atoms in the as-grown films obtained by EXAFS fitting.

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/content/aip/journal/apl/97/15/10.1063/1.3499751
2010-10-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The origin of the resistance change in GeSbTe films
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3499751
10.1063/1.3499751
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