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SIMS depth profile of nitrogen concentration for GaAs samples treated with II-PLM-RTA. Labels show the nitrogen doses in atoms per centimeter square implanted at 15 keV. The PLM was performed at laser fluence. All the samples were treated by RTA at for 5 s in 1 atm of .
(a) PC of based Schottky diodes. Inset shows the illumination power measured with a calibrated Si detector and a power meter. (b) Responsivity of the same samples calculated by dividing the PC by the illumination power. All the curves are normalized by the corresponding values at 800 nm for clarity. (c) Square root of the responsivity. Dashed lines are linear fits. Arrows indicate the responsivity turn-on thresholds.
Band gap energies of vs N concentration from the fitting of responsivity spectra (diamonds) compared with results of PR from Refs. 5 and 8 (squares), and values deduced from BEEM (Ref. 10) (triangles). The dashed line is the calculated values from the BAC model.
Summary of II-PLM-RTA treated samples.
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