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Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
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10.1063/1.3501136
/content/aip/journal/apl/97/15/10.1063/1.3501136
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3501136
/content/aip/journal/apl/97/15/10.1063/1.3501136
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/content/aip/journal/apl/97/15/10.1063/1.3501136
2010-10-11
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/15/10.1063/1.3501136
10.1063/1.3501136
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