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Scanning electron micrographs of the MOSFET device architectures studied. (a) Photolithography defined Hall bar with a single gate. (b) EBL defined Hall bar with overlapping-gate architecture. (c) Zoom-in of panel (b) showing the area where the channel gate is electrically insulated from the lead gates by a thin layer of aluminum oxide .
(a) Control of the contact resistance in the overlapping-gate Hall bar MOSFET (EBL fabricated device). Here only the channel gate voltage is swept as the voltage of the lead gates is increased stepwise from to 1.0 V. (b) Four-terminal device resistance as a function of the lead gate voltage.
Device resistance (a) and electron density (b) as function of (channel) gate voltage for the two device architectures studied.
Mobility vs electron density. Note that with the EBL device one can measure at much lower densities as compared to the PHOTO device.
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