1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode
Rent:
Rent this article for
USD
10.1063/1.3495777
/content/aip/journal/apl/97/16/10.1063/1.3495777
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/16/10.1063/1.3495777
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) White light, optical picture and (b) corresponding PL map of a graphene flake subjected to an plasma treatment. The SLG parts indicated are responsible for PL emission. All PL maps are integrated in the 350–850 nm range; the color palette used is in units of counts/ms. (c) Room-temperature output characteristics of a 4-probe SSLG device with Cr metal contacts. The transfer characteristics of the same device are shown in the inset ( is applied across the backgate).

Image of FIG. 2.
FIG. 2.

Diagrams of the band alignment in the cases of a -doped semiconductor (work function ) contacted with (a) two identical metal electrodes , and (b) two metal electrodes and with different work functions . The SB height is indicated.

Image of FIG. 3.
FIG. 3.

(a) Comparison of the room-temperature, output characteristics of Al–SSLG–Al and Yb–SSLG–Yb devices. (b) Diagram of the Schottky diodes fabricated with different metal electrodes. (c) Comparison of the room-temperature, output characteristics of Al–SSLG–Pd and Yb–SSLG–Pd devices, whereby the rectifying behavior is visible. A detailed behavior of the two devices in reverse bias is shown in the inset.

Loading

Article metrics loading...

/content/aip/journal/apl/97/16/10.1063/1.3495777
2010-10-18
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/16/10.1063/1.3495777
10.1063/1.3495777
SEARCH_EXPAND_ITEM