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Measured and fitted SH intensity data vs azimuthal angle of the incident plane for (a) the reference and (b) the plasma-activated samples, for both figures measured at the surface of bulk material and of an SOI structure with a 88-nm-thick top silicon layer. Also in (a): schematic description of the applied RASHG measurement configuration.
Experimental time-domain data of terahertz field signals generated for different optical excitation power at the PA and reference silicon slab waveguides . Upper right picture: Schematic of the experimental configuration used for THz signal generation.
(a) Frequency-domain data of the THz amplitudes generated at the PA and reference slab waveguide as a function of varying optical excitation power. (b) Terahertz frequency-domain field amplitudes plotted against average pump power. Field amplitudes for are multiplied by 0.25 for better visualization.
Comparison of plasma-induced susceptibility enhancements at investigated samples.
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