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Deep-ultraviolet photodetectors from epitaxially grown
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10.1063/1.3503634
/content/aip/journal/apl/97/16/10.1063/1.3503634
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/16/10.1063/1.3503634
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Characterizations of the film including (a) postgrowth RHEED indicating good surface order, (b) RBS spectrum of the film quantifying the composition, (c) XRD spectrum showing the highly oriented character of the film, and (d) optical transmission spectrum illustrating the UVC absorption edge.

Image of FIG. 2.
FIG. 2.

Photocurrent generated through the device (and corresponding responsivity) by 250 nm light. Inset shows the standard contact device geometry used.

Image of FIG. 3.
FIG. 3.

(a) The voltage-dependent photoconductor responsivity at peak-response wavelength and (b) the corresponding device dark current.

Image of FIG. 4.
FIG. 4.

photoconductor spectral responsivity. The devices exhibit abrupt UVC response-cutoff and a DUV:VIS rejection ratio of 800:1.

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/content/aip/journal/apl/97/16/10.1063/1.3503634
2010-10-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/16/10.1063/1.3503634
10.1063/1.3503634
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