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Ti/Cu bilayer electrodes for -passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance
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Image of FIG. 1.
FIG. 1.

Cross-sectional diagram of the bottom gate, inverted staggered thin film transistor devices with a etch stopper, and a passivation. The source-drain metals consist of either molybdenum (Mo) or a titanium/copper (Ti/Cu) bilayer.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of the HIZO TFTs with Mo and Ti/Cu source-drain electrodes. The drain voltage was maintained at 10 V. The energy band diagrams schematically illustrate the more sluggish charge injection at the Ti/HIZO interface, by the presence of an insulating interlayer.

Image of FIG. 3.
FIG. 3.

Plots of the width-normalized total resistance vs physical channel length (l) for the devices using (a) Mo and (b) Ti/Cu electrodes. The plots were performed at different gate voltages, and the resistance value at the intersection of the least square fit lines is the total contact resistance .

Image of FIG. 4.
FIG. 4.

TEM images of the contact region between the source-drain electrodes and the HIZO semiconductor for the devices using (a) Mo and (b) Ti/Cu bilayer electrodes.


Generic image for table
Table I.

Initial transfer characteristics of the devices.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance