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Gate voltage dependence of weak localization in bilayer graphene
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10.1063/1.3505310
/content/aip/journal/apl/97/16/10.1063/1.3505310
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/16/10.1063/1.3505310
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The curve at 1.5 K and . (b) and (c) are the gate voltage dependence of carrier mobility and carrier density , respectively.

Image of FIG. 2.
FIG. 2.

(a) The curves measured at 1.5 K with different gate voltages and magnetic fields. The magnetic field dependent curves are magnified at right side. (b) The curves under different gate voltages with fixed and .

Image of FIG. 3.
FIG. 3.

(a) MC curves with various gate voltages. Dots and lines in the graph are the experimental data and the theoretical fittings, respectively. (b) The essential parameters of and calculated by fitting the curves in (a).

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/content/aip/journal/apl/97/16/10.1063/1.3505310
2010-10-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate voltage dependence of weak localization in bilayer graphene
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/16/10.1063/1.3505310
10.1063/1.3505310
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