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Interface effects on an ultrathin Co film in multilayers based on the organic semiconductor
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10.1063/1.3505495
/content/aip/journal/apl/97/16/10.1063/1.3505495
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/16/10.1063/1.3505495
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM Images (height topographic signal) for the sample (top panel): (a) example of a typical Ta/Co morphology (zoom from the original size ); (b) example of recrystallization when the Co barely decorates the structure underneath (zoom from the original size ), and (c) Ta/Co/1 nm (bottom panel).

Image of FIG. 2.
FIG. 2.

The barrier thickness dependence of (a) rms roughness (circles) and PP height (squares); (b) saturation magnetization (squares) and coercive field (dots); (c) NMR integrated intensity of bulk cobalt (dots). Lines are guides for eyes. Inset: temperature dependence of the magnetization measured in the sample without barrier (, in-plane).

Image of FIG. 3.
FIG. 3.

Zero-field NMR in (a) without, (b) with 1-nm-thick, and (c) with 3-nm-thick barrier measured at . All spectra were corrected by corresponding enhancement factor.

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/content/aip/journal/apl/97/16/10.1063/1.3505495
2010-10-22
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface effects on an ultrathin Co film in multilayers based on the organic semiconductor Alq3
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/16/10.1063/1.3505495
10.1063/1.3505495
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