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Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix
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10.1063/1.3499426
/content/aip/journal/apl/97/17/10.1063/1.3499426
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/17/10.1063/1.3499426
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Figures

Image of FIG. 1.
FIG. 1.

(a) TEM cross-section image and (b) corresponding GISAXS map of the as-deposited film. [(c) and (d)] TEM cross-section image and corresponding GISAXS map of the annealed film. The insets show the FT of the TEM images shown. (e) GISAXS map of the pure film. (f) Concentration profile of Ge measured by RBS, showing the loss of Ge due to the annealing treatment.

Image of FIG. 2.
FIG. 2.

Concentration profiles of the different elements in the as-deposited and annealed films. The profiles were measured on cross sections taken along the lines indicated in the insets showing HAADF STEM images of the films.

Image of FIG. 3.
FIG. 3.

(a) XRD curves measured on the as-deposited and annealed films. The dashed lines show the positions of the diffraction peaks from crystalline Ge. (b) Raman curves measured on the same samples and on the pure Si substrate. The dashed line shows the position of the Ge TO crystalline peak. (c) Luminescence spectra of the films and Si substrate.

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/content/aip/journal/apl/97/17/10.1063/1.3499426
2010-10-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/17/10.1063/1.3499426
10.1063/1.3499426
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