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(a) Schematic illustration based on the photolithographic mask design. (b) Overview of a prepared junction structure acquired by scanning electron microscopy.
characteristics of the Josephson junction measured bidirectional at 4.2 K in current bias mode. An hysteretic difference between increasing and decreasing bias currents is visible in the negative branch. The inset shows the resistance vs temperature of a junction measured with a bias current of .
Critical Josephson current vs temperature, circles represent the experimental data whereas the dotted line is a guide for the eye.
characteristic under microwave irradiation at different frequencies: (1) without microwave irradiation, (2) 10 GHz, (3) 12 GHz, (4) 13 GHz, and (5) 18 GHz. Each curve is shifted by to the previous. Shapiro steps at the 12 GHz curve are marked by arrows. The index of each step denotes multiples of .
Critical current vs microwave voltage at 12 GHz. The solid line denotes a Bessel simulation with a subjacent exponential decay. This exponential behavior is probably thermally induced. The fit parameters are , , and with an excess current at zero microwave amplitude. The inset shows some characteristics at different microwave voltages. Each curve is shifted by to the previous.
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