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In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in films
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10.1063/1.3502591
/content/aip/journal/apl/97/18/10.1063/1.3502591
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3502591
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Figures

Image of FIG. 1.
FIG. 1.

(a) XRD pattern of -thick PZT film prepared on substrate. (b) Optical microscope image for top electrodes composed of Pt and ultrathin Au dots, (c) hysteresis loops of PZT film measured at 1 kHz, and (d) curves at maximum electric field of 100 kV/cm and 150 kV/cm measured at 5 Hz before and after two step saturations. Insets in (c) and (d) are the saturation properties of (c) and (d) value.

Image of FIG. 2.
FIG. 2.

(a) Raman spectra for PZT films recorded at outside of electrode and inside of electrode after the maximum electric field of 200 kV/cm. (b) as a function of volume fraction of (001) orientation, . Solid line in (b) is .

Image of FIG. 3.
FIG. 3.

(a) Raman spectra recorded at inside of electrode before/under/after applying the electric field of 150 kV/cm. Electric field dependence of the estimated (b) and (c) from Eqs. (1) and (2) [(closed circles; under the electric field (closed squares); after applying electric field].

Image of FIG. 4.
FIG. 4.

Experimental curve for unipolar electric field and estimated values (open circles with error bars). curve for unipolar-axis oriented epitaxial film are also shown (see Ref. 18).

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/content/aip/journal/apl/97/18/10.1063/1.3502591
2010-11-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in Pb(Zr,Ti)O3 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3502591
10.1063/1.3502591
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