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Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications
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10.1063/1.3508954
/content/aip/journal/apl/97/18/10.1063/1.3508954
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3508954
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Resistivity vs temperature of GeTe at constant Ar flow rate with varying sputtering power.

Image of FIG. 2.
FIG. 2.

(a) Structure of the phase change switch using GeTe. (b) Schematic of testing circuit. (c) DUT resistance vs pulse current amplitude for applied voltage set (400 ns) and reset (40 ns) pulses under test condition and .

Image of FIG. 3.
FIG. 3.

Simplified diagram to illustrate (a) partial crystallization and (b) partial reamorphization.

Image of FIG. 4.
FIG. 4.

Calculated and measured required to reset from varying .

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/content/aip/journal/apl/97/18/10.1063/1.3508954
2010-11-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3508954
10.1063/1.3508954
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