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Resistivity vs temperature of GeTe at constant Ar flow rate with varying sputtering power.
(a) Structure of the phase change switch using GeTe. (b) Schematic of testing circuit. (c) DUT resistance vs pulse current amplitude for applied voltage set (400 ns) and reset (40 ns) pulses under test condition and .
Simplified diagram to illustrate (a) partial crystallization and (b) partial reamorphization.
Calculated and measured required to reset from varying .
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