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Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
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10.1063/1.3510471
/content/aip/journal/apl/97/18/10.1063/1.3510471
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3510471
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The evolution of transfer curves as a function of the applied −20 V NBS time (a) in the dark and (b) under green light exposure for .

Image of FIG. 2.
FIG. 2.

Transfer and C-V curves at 2 kHz frequency of (a) the pristine device and those of (b) the device subjected to −20 V NBS under green light exposure for .

Image of FIG. 3.
FIG. 3.

The evolution of C-V curves as a function of the applied −20 V NBS time (a) in the dark and (b) under green light exposure. (c) The recovery characteristic of C-V curve after NBS under green light exposure. (d) The schematic band diagram of a-IGZO after NBS under illumination.

Image of FIG. 4.
FIG. 4.

The creation state and involved n-type doping mechanism.

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/content/aip/journal/apl/97/18/10.1063/1.3510471
2010-11-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3510471
10.1063/1.3510471
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