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The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality
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10.1063/1.3511737
/content/aip/journal/apl/97/18/10.1063/1.3511737
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3511737
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Figures

Image of FIG. 1.
FIG. 1.

Example of time-resolved measurements of the silane depletion and of the active power [120 SCCM (SCCM denotes cubic centimeter per minute at STP) , 1 mbar, 200 W, 30 s discharge, ignition at ].

Image of FIG. 2.
FIG. 2.

Depletion fraction , deposition rate , active power and minority carrier lifetime as a function of (a) the VHF power (120 SCCM , 0.8 mbar); (b) the silane flow (200 W, 0.8 mbar); (c) the total pressure (200 W, 120 SCCM ). Wafers are passivated with intrinsic a-Si:H layers and are annealed at for 90 min. Lines are guides for the eye. The legend in panel (a) applies to panel (b) and (c) as well.

Image of FIG. 3.
FIG. 3.

Illuminated-IV curve of the best heterojunction solar cell, measured under standard test conditions (in-house measurement).

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/content/aip/journal/apl/97/18/10.1063/1.3511737
2010-11-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3511737
10.1063/1.3511737
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