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Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain
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10.1063/1.3511768
/content/aip/journal/apl/97/18/10.1063/1.3511768
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3511768

Figures

Image of FIG. 1.
FIG. 1.

The total photocurrent measured in heterostructure is well fitted with Eq. (1), where the dashed line and the dotted line represent CPGE and LPGE currents, respectively. Inset: the schematic diagram of the measurement geometry.

Image of FIG. 2.
FIG. 2.

The amplitude of the CPGE current as a function of the uniaxial strain in heterostructure. The solid line is fitted linearly. Inset: the schematic diagram of the uniaxial strain equipment, where , , and are the central deformation, the sample thickness, and the length of the sample, respectively.

Image of FIG. 3.
FIG. 3.

The R/D ratios of the 2DEG in heterostructures with various Al compositions between 15% and 36%.

Tables

Generic image for table
Table I.

The ratios of Rashba and Dresselhaus coefficients (R/D ratios) and Hall parameters in heterostructures with various Al compositions between 15% and 36%.

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/content/aip/journal/apl/97/18/10.1063/1.3511768
2010-11-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3511768
10.1063/1.3511768
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