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(a) SEM image of a GaN/InGaN core-shell nanowire showing inner GaN core and darker InGaN shell. (b)–(e) Monochromatic CL images of the nanowire at 360, 480, 600, and 700 nm. (f) Color composite image of (b)–(e). The scale bar in (a) applies to all images.
(a) Cross-sectional STEM image of a GaN/InGaN nanowire and indium line profiles obtained by EDXS. The porous layer on the InGaN surface is a platinum protection layer deposited before ion milling. (b) Typical plan-view bright-field TEM image showing threading dislocations in InGaN epilayer.
The strain energy distribution in cross-section of a GaN/InGaN core/shell nanowire as calculated by finite element analysis. The InGaN shell thicknesses on the left and right facets are 5 nm and 15 nm, 10 nm and 30 nm, 30 nm and 90 nm, and 45 nm and 135 nm in (a)–(d), respectively.
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